page . 1 st ad-jan.08.2010 PJP830 / pjf830 fea tures ? 4.5a , 500v, r ds(on) =1.5 @v gs =10v, i d =2.5a ? low on resistance? fa st switching ? low gate charge ? fully chara cterized a vala nche v oltage a nd current ? spe ci ally de sigened f or ac ada pter , battery charge a nd smps ? in compli a nce with eu rohs 2002/95/ec dire ctive s mechanical da ta ? ca se: t o-220ab / it o-220ab molded pla stic ? t ermin als : soldera ble per mil-st d-750,method 2026 or dering informa tion 500v n-channel enhancement mode mosfet m axi mum ra tings a nd thermal chara cteristics (t a =25 o c unle ss otherwise noted ) note : 1. m axi mum dc current li mited by the pa ck age p an jit reser ves the right t o improve product design,functions and reliability without notice internal schematic diagram drain gate source 1 2 3 to-220ab / ito-220ab 1 2 3 g d s to-220ab ito-220ab 1 2 3 g d s type marking package packing PJP830 p830 to-220ab 50pcs/tube pjf830 f830 ito-220ab 50pcs/tube pa ra m e te r s ym b o l p j p 8 3 0 p j f 8 3 0 uni ts d r a i n- s o ur c e vo lta g e v d s 5 0 0 v ga te - s o ur c e vo lta g e v gs + 3 0 v c o nti nuo us d ra i n c ur re nt i d 4 .5 4 .5 a p uls e d d r a i n c urr e nt 1 ) i d m 1 8 1 8 a m a xi m um p o we r d i s s i p a ti o n d e ra ti ng f a c to r t a =2 5 o c p d 8 7 0 .7 4 4 0 .3 5 w op e ra ti ng j unc t i o n a nd s to ra g e te m p e r a ture ra ng e t j ,t s tg -5 5 to +1 5 0 o c avalanche energy with single pulse i as =4.5a, vdd=82v, l=26.5mh e a s 3 1 0 m j junction-to-case thermal resistance r j c 1 .4 3 2 .8 2 o c /w junction-to ambient thermal resistance r j a 6 2 .5 1 0 0 o c /w
page . 2 st ad-jan.08.2010 PJP830 / pjf830 electrical characteristics ( t a =25 o c unless otherwise noted ) note : plus te st : pluse w idth < 300us, duty cycle < 2%. p a r a m e te r s ymb o l te s t c o nd i ti o n m i n. typ . ma x. uni ts s ta ti c d r a i n- s o urc e b re a k d o wn vo lta g e b v d s s v gs =0 v, i d =2 5 0 ua 5 0 0 - - v ga te thre s ho ld vo lta g e v gs (th) v d s =v gs , i d =2 5 0 ua 2 .0 - 4 .0 v d r a i n- s o ur c e on- s ta t e re s i s ta nc e r d s ( o n) v gs = 10v, i d = 2.5a - 1.3 1.5 ze r o ga te vo lta g e d r a i n c ur r e nt i d s s v ds =500v, v gs =0v - - 10 ua gate body leakage i gs s v gs = + 3 0 v, v d s =0 v - - + 1 0 0 n dynamic to ta l ga te c ha r g e q g v d s =4 0 0 v, i d =4 .5 a v gs =1 0 v - 1 8 .6 - nc ga te - s o ur c e c ha rg e q g s - 3 .6 - ga te - d r a i n c ha r g e q g d - 8.4 - tur n- on d e la y ti me t d (o n) v dd =250v , i d =4.5a v gs =10v , r g =25 - 12.8 26 ns tur n- on ri s e ti m e t r - 16.4 22 tur n- off d e la y ti me t d (o ff) - 3 6 .2 5 6 tur n- off f a ll ti m e t f - 2 2 3 2 inp ut c a p a c i ta nc e c i s s v d s =2 5 v, v gs =0 v f=1 .0 mh z - 5 6 0 9 8 0 p f outp ut c a p a c i t a nc e c o s s - 68 150 re ve r s e tra ns f e r c a p a c i ta nc e c rs s - 8.2 12 s o urc e - d ra i n d i o d e ma x. d i o d e f o rwa rd c urr e nt i s - - - 4 .5 a ma x.p uls e d s o ur c e c urr e nt i s m - - - 1 8 a d i o d e f o r wa r d vo lta g e v s d i s =4 .5 a , v gs =0 v - - 1 .5 v re ve r s e re c o ve r y ti m e t r r v gs =0 v, i f = 4 .5 a d i /d t=1 0 0 a /us - 2 5 0 - ns re ve r s e re c o ve r y c ha r g e q rr - 2 .2 - uc
PJP830 / pjf830 typical characteristics curves ( ta=25 , unless otherwise noted) fig.1 output characteristric fig.2 transfer characteristric 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 i d - drain-to-source current (a) v ds - drain-to-source voltage (v) v gs = 20v~ 7.0v 5.0v 6.0v 1 1.2 1.4 1.6 1.8 2 2.2 2.4 0 2 4 6 8 10 r ds(on) - on resistance( ? ) i d - drain current (a) v gs = 20v v gs =10v 1 1.2 1.4 1.6 1.8 2 2 4 6 8 10 r ds(on) - on resistance( ? ) v gs - gate-to-source voltage (v) i d =2.5a t j =25 o c 0.1 1 10 2 3 4 5 6 7 8 i d - drain source current (a) v gs - gate-to-source voltage (v) v ds =50v t j = 125 o c 25 o c - 55 o c PJP830 / pjf830 typical characteristics curves ( ta=25 , unless otherwise noted) fig.3 on resistance vs drain current fig.4 on resistance vs gate to source voltage stad-jan.08.2010 fig.5 on resistance vs junction temperature fig.6 capacitance page. 3 fig.1 output characteristric fig.2 transfer characteristric 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 i d - drain-to-source current (a) v ds - drain-to-source voltage (v) v gs = 20v~ 7.0v 5.0v 6.0v 1 1.2 1.4 1.6 1.8 2 2.2 2.4 0 2 4 6 8 10 r ds(on) - on resistance( ? ) i d - drain current (a) v gs = 20v v gs =10v 0 200 400 600 800 1000 0 5 10 15 20 25 30 c - capacitance (pf) v ds - drain-to-source voltage (v) ciss coss crss f = 1mhz v gs = 0v 1 1.2 1.4 1.6 1.8 2 2 4 6 8 10 r ds(on) - on resistance( ? ) v gs - gate-to-source voltage (v) i d =2.5a t j =25 o c 0.5 0.9 1.3 1.7 2.1 2.5 2.9 -50 -25 0 25 50 75 100 125 150 r ds(on) - on-resistance(normalized) t j - junction temperature ( o c) v gs =10 v i d =2.5a 0.1 1 10 2 3 4 5 6 7 8 i d - drain source current (a) v gs - gate-to-source voltage (v) v ds =50v t j = 125 o c 25 o c - 55 o c
fig. 7 gate charge waveform PJP830 / pjf830 typical characteristics curves ( ta=25 , unless otherwise noted) fig.8 source-drain diode forward voltage 0.8 0.9 1 1.1 1.2 -50 -25 0 25 50 75 100 125 150 bv bv bv bv dss dss dss dss - -- - breakdown voltage(normalized) breakdown voltage(normalized) breakdown voltage(normalized) breakdown voltage(normalized) tj - junction temperature ( o c) i d = 250 a 0.01 0.1 1 10 100 0.2 0.4 0.6 0.8 1 1.2 1.4 i s - source current (a) v sd - source-to-drain voltage (v) t j = 125 o c 25 o c v gs = 0v - 55 o c 0 2 4 6 8 10 12 0 4 8 12 16 20 v gs - gate-to-source voltage (v) q g - gate charge (nc) i d =4.5a v ds =400v v ds =250v v ds =100v fig. 7 gate charge waveform PJP830 / pjf830 typical characteristics curves ( ta=25 , unless otherwise noted) fig.8 source-drain diode forward voltage fig.9 breakdown voltage vs junction temperature stad-jan.08.2010 page. 4 0.8 0.9 1 1.1 1.2 -50 -25 0 25 50 75 100 125 150 bv bv bv bv dss dss dss dss - -- - breakdown voltage(normalized) breakdown voltage(normalized) breakdown voltage(normalized) breakdown voltage(normalized) tj - junction temperature ( o c) i d = 250 a 0.01 0.1 1 10 100 0.2 0.4 0.6 0.8 1 1.2 1.4 i s - source current (a) v sd - source-to-drain voltage (v) t j = 125 o c 25 o c v gs = 0v - 55 o c 0 2 4 6 8 10 12 0 4 8 12 16 20 v gs - gate-to-source voltage (v) q g - gate charge (nc) i d =4.5a v ds =400v v ds =250v v ds =100v
page . 5 st ad-jan.08.2010 PJP830 / pjf830 copyright panjit international, inc 2010the inf ormation pre sented in this document is believed to be a ccurate a nd reli a ble. the spe cif ication s a nd inf ormation here in are subject to change without notice. pan jit makes no warranty, representation or guarantee regarding the suitability of itsproducts for any particular purpose. pan jit products are not authorized for use in life support devices or systems. pan jit does not convey any license under its patent rights or rights of others. legal st a tement
halogen free product declaration (use green molding compound :eler-8 ) 1. pan jit can produce halogen free product use molding compound for packing from mar.2008 that contain br<700 ppm,cl<700ppm, br+cl<1000ppm,sb2o3<100ppm. 2. if your company need halogen free product shall be note requirement green compound material on order for the halogen free product request.
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